Microelectronic devices including filled slits and memory cell pillars, and related memory devices and electronic systems
US11737275B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Apr 16, 2021 |
| Grant date | Aug 22, 2023 |
| Priority date | — |
| Expiry date | Apr 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
Abstract
A microelectronic device may include a source structure and a stack structure. The stack structure may include a vertically alternating sequence of insulative structures and conductive structures. Filled slits may extend through the stack structure and into the source structure, the slits dividing the stack structure into multiple blocks. Memory cell pillars may extend through the stack structure and into the source structure, the memory cell pillars and the filled slits terminated at substantially the same depth within the source structure as one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.