Dynamic voltage setting optimization during lifetime of a memory device
US11740959B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jul 9, 2020 |
| Grant date | Aug 29, 2023 |
| Priority date | — |
| Expiry date | Oct 16, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An initial level of sensing voltage is set based on one or more characteristics of the segment of the memory device. A count for operational cycles for a segment of a memory device is set. Responsive to determining that a number of operational cycles performed on the segment of the memory device has reached the set count of operational cycles, the sensing voltage is varied with respect to the initial level of sensing voltage. The sensing voltage is adjusted to a new level based on wearing of the segment of the memory device during the number of operational cycles performed on the segment of the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.