Methods and apparatus for processing a substrate
US11749532B2 · kind B2 · utility
0Cited by
7References
17Claims
0Family size
Assignee
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Key dates
| Filing date | May 4, 2021 |
| Grant date | Sep 5, 2023 |
| Priority date | — |
| Expiry date | May 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53242
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for processing a substrate are provided. For example, a method of processing a substrate comprises supplying oxygen (O2) into a processing volume of an etch chamber to react with a silicon-based hardmask layer atop a base layer of ruthenium to form a covering of an SiO-like material over the silicon-based hardmask layer and etching the base layer of ruthenium using at least one of O2 or chloride (Cl2) while supplying nitrogen (N2) to sputter some of the SiO-like material onto an exposed ruthenium sidewall created during etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.