Forming high carbon content flowable dielectric film with low processing damage
US11756786B2 · kind B2 · utility
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20References
14Claims
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Key dates
| Filing date | Jan 18, 2019 |
| Grant date | Sep 12, 2023 |
| Priority date | — |
| Expiry date | Apr 19, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a dielectric film includes depositing a first precursor on a substrate. The first precursor includes a cyclic carbosiloxane group comprising a six-membered ring. The method also includes depositing a second precursor on the substrate. The first precursor and the second precursor form a preliminary film on the substrate, and the second precursor includes silicon, carbon, and hydrogen. The method further includes exposing the preliminary film to energy from an energy source to form a porous dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.