Power transistor with integrated Schottky diode

US11757031B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Hell · Erlangen, DE
• Rudolf Elpelt · Erlangen, DE
• Caspar Leendertz · Munich, DE

Key dates

• Filing date: Aug 20, 2020
• Grant date: Sep 12, 2023
• Expiry date: Jan 29, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

According to an embodiment of a semiconductor device, the device includes: a plurality of device cells formed in a semiconductor substrate, each device cell including a transistor structure and a Schottky diode structure; and a superjunction structure that includes alternating regions of a first conductivity type and of a second conductivity type formed in the semiconductor substrate. For each transistor structure, a channel region of the transistor structure and a Schottky metal region of an adjacent one of the Schottky diode structures are interconnected by semiconductor material of the first conductivity type without interruption by any of the regions of the second conductivity type of the superjunction structure, the semiconductor material of the first conductivity type including one or more of the regions of the first conductivity type of the superjunction structure.