Fabricating method of reducing photoresist footing
US11762293B2 · kind B2 · utility
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Key dates
| Filing date | May 11, 2021 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Dec 16, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/345
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A fabricating method of reducing photoresist footing includes providing a silicon nitride layer. Later, a fluorination process is performed to graft fluoride ions onto a top surface of the silicon nitride layer. After the fluorination process, a photoresist is formed to contact the top surface of the silicon nitride layer. Finally, the photoresist is patterned to remove at least part of the photoresist contacting the silicon nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.