Ruthenium liner and cap for back-end-of-line applications
US11764157B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Jul 22, 2021 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Jul 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.