Semiconductor device having a corner spacer

US11769821B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chen-Ping Chen · Toucheng Township, TW
• Kuei-Yu Kao · Hsinchu, TW
• Shih-Yao Lin · New Taipei, TW
• Chih-Han Lin · Hsinchu, TW
• Ming-Ching Chang · Hsinchu, TW
• Chao-Cheng Chen · Hsinchu, TW

Key dates

• Filing date: Nov 23, 2020
• Grant date: Sep 26, 2023
• Expiry date: Jan 5, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

A device includes a fin protruding from a semiconductor substrate; a gate stack over and along a sidewall of the fin; a gate spacer along a sidewall of the gate stack and along the sidewall of the fin; an epitaxial source/drain region in the fin and adjacent the gate spacer; and a corner spacer between the gate stack and the gate spacer, wherein the corner spacer extends along the sidewall of the fin, wherein a first region between the gate stack and the sidewall of the fin is free of the corner spacer, wherein a second region between the gate stack and the gate spacer is free of the corner spacer.