Gate trench power semiconductor devices having improved deep shield connection patterns
US11769828B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2021 |
| Grant date | Sep 26, 2023 |
| Priority date | — |
| Expiry date | Feb 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
A power semiconductor device comprises a semiconductor layer structure comprising a drift region that comprises a wide band-gap semiconductor material and has a first conductivity type, a first gate structure and an adjacent second gate structure in an upper portion of the semiconductor layer structure, a deep shielding region in the drift region, and a connection region protruding upwardly from the deep shielding region and separating the first gate structure and the second gate structure from each other. The deep shielding region extends from underneath the first gate structure to underneath the second gate structure, and the deep shielding region has a second conductivity type that is different from the first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.