Method for removing hard masks
US11788007B2 · kind B2 · utility
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6References
9Claims
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Key dates
| Filing date | Jul 30, 2021 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Jul 30, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Provided are compositions and methods useful in etching, i.e., removing amorphous carbon hard masks which have been doped with elements such as boron, chlorine, or nitrogen. The compositions utilize concentrated sulfuric acid, water, and at least one oxidizing agent. In the operation of the method, the composition selectively removes the doped hard mask layer, even in the presence of layers such as silicon dioxide, silicon nitride, tantalum nitride, and polysilicon, with good selectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.