Patent · US Active

Extreme ultraviolet mask blank defect reduction

US11789358B2 · kind B2 · utility

0Cited by

4References

20Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Wen Xiao · Shanghai, CN
Vibhu Jindal · Milpitas, US
Weimin Li · Lo Wu, CN
Sanjay Bhat · Singapore, SG
Azeddine Zerrade · Boise, US

Key dates

Filing date	Apr 20, 2021
Grant date	Oct 17, 2023
Priority date	—
Expiry date	Jan 11, 2042

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/72
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.