Process for producing an electrical contact on a silicon carbide substrate

US11798807B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Stefan Krivec · Villach, AT
• Ronny Kern · Finkenstein, AT
• Stefan Kramp · Villach, AT
• Gregor Langer · Klagenfurt, AT
• Hannes Winkler · Villach, AT
• Stefan Woehlert · Villach, AT

Key dates

• Filing date: May 10, 2021
• Grant date: Oct 24, 2023
• Expiry date: Nov 4, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/233
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for producing an electrical contact with a first metal layer and at least one second metal layer on a silicon carbide substrate includes removing at least some of the carbon residue by a cleaning process, to clean the first metal layer. The first metal layer and/or the at least one second metal layer may be generated by sputtering deposition.