Phase change memory cell galvanic corrosion prevention

US11800817B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Injo Ok · Lockport, US
• Nicole Saulnier · Albany, US
• Kevin W. Brew · Albany, US
• Steven Michael McDermott · Wynantskill, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Hari Prasad Amanapu · Guilderland, US
• Adra Carr · Albany, US
• Prasad Bhosale · Slingerlands, US

Key dates

• Filing date: Jun 21, 2021
• Grant date: Oct 24, 2023
• Expiry date: Mar 4, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A method for forming a phase-change memory cell includes depositing a metal layer over a wafer such that the metal layer covers connection structures of the wafer. The method further includes removing a portion of the metal layer such that the connection structures of the wafer remain covered by a remaining portion of the metal layer. The method further includes forming a phase-change memory stack on a stack area of the remaining portion of the metal layer. The method further includes removing the remaining portion of the metal layer except in the stack area.