Semiconductor device with first and second portions that include silicon and nitrogen

US11804415B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Markus Kahn · Rangersdorf, AT
• Oliver Humbel · Maria Elend, AT
• Philipp Koch · Villach, AT
• Angelika Koprowski · Klagenfurt, AT
• Christian Maier · Kettenham, DE
• Gerhard Schmidt · Graz, AT
• Juergen Steinbrenner · Zistersdorf, AT

Key dates

• Filing date: May 28, 2021
• Grant date: Oct 31, 2023
• Expiry date: Jan 7, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes: a semiconductor body having an active region and an edge termination region between the active region and a side surface of the semiconductor body; a first portion including silicon and nitrogen; a second portion including silicon and nitrogen, the second portion being in direct contact with the first portion; and a front side metallization in contact with the semiconductor body in the active region. The first portion separates the second portion from the semiconductor body. An average silicon content in the first portion is higher than in the second portion. The front side metallization is interposed between the first portion and the semiconductor body in the active region but not in the edge termination region, and/or the first portion and the second portion are both present in the edge termination region but not in the active region.