Patent · US Active

Semiconductor device and method

US11817482B2 · kind B2 · utility

0Cited by

4References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Helmut Brech · Lappersdorf, DE
Carsten Ahrens · Birkenfeld, DE
Matthias Zigldrum · Regensburg, DE

Key dates

Filing date	Aug 20, 2020
Grant date	Nov 14, 2023
Priority date	—
Expiry date	Apr 24, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D88/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a composite layer having a first and second opposing surfaces. The composite layer includes a mesa and a first insulating layer. The mesa has top and bottom surfaces and side faces. The side faces are embedded in the first insulating layer. The mesa includes a Group III nitride-based multilayer structure providing a Group III nitride based device having first and second electrodes arranged on the mesa top surface. First and second outer contacts are positioned on the second surface of the composite layer. A first conductive via extends through the first insulating layer and is electrically coupled to the first electrode on the mesa top surface and to the first outer contact. A second conductive via extends through the first insulating layer and is electrically coupled to the second electrode on the mesa top surface and to the second outer contact.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.