Amorphous silicon-based films resistant to crystallization

US11827514B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Aykut Aydin · Sunnyvale, US
• Krishna Nittala · Sunnyvale, US
• Karthik Janakiraman · San Jose, US
• Yi Yang · New Taipei, TW
• Gautam K. Hemani · San Jose, US

Key dates

• Filing date: Oct 27, 2020
• Grant date: Nov 28, 2023
• Expiry date: Mar 29, 2042

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01P2006/90
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.