Method of cleaning a structure and method of depositing a capping layer in a structure

US11830725B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Naomi Yoshida · Sunnyvale, US
• He Ren · San Jose, US
• Hao Jiang · 安丰镇, CN
• Chenfei Shen · Los Angeles, US
• Chi-Chou Lin · New Taipei, TW
• Hao Chen · Ann Arbor, US
• Xuesong Lu · San Jose, US
• Mehul Naik · San Jose, US

Key dates

• Filing date: Jan 20, 2021
• Grant date: Nov 28, 2023
• Expiry date: Oct 20, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the present disclosure generally relate to methods of cleaning a structure and methods of depositing a capping layer in a structure. The method of cleaning a structure includes suppling a cleaning gas, including a first gas including nitrogen (N) and a second gas including fluorine (F), to a bottom surface of a structure. The cleaning gas removes unwanted metal oxide and etch residue from the bottom surface of the structure. The method of depositing a capping layer includes depositing the capping layer over the bottom surface of the structure. The methods described herein reduce the amount of unwanted metal oxides and residue, which improves adhesion of deposited capping layers.