CMP composition for polishing hard materials
US11840645B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Jan 30, 2021 |
| Grant date | Dec 12, 2023 |
| Priority date | — |
| Expiry date | Jul 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A slurry for chemical mechanical polishing (CMP) includes an aqueous liquid carrier, an oxygen and anion containing transition metal compound or polyatomic cations including a transition metal and oxygen or hydrogen, and a per-based oxidizer. The anion for the oxygen and anion containing transition metal compound can include oxynitrate, oxychloride, oxyhydroxide, oxyacetate, oxysulfide, or oxysulfate. The per-based oxidizer can be a permanganate compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.