Patent · US Active

Semiconductor device and method for forming a semiconductor device

US11842938B2 · kind B2 · utility

0Cited by

2References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jens Peter Konrath · Villach, AT
Wolfgang Bergner · Waldbüttelbrunn, DE
Romain Esteve · Munich, DE
Richard Gaisberger · Sankt Veit in der Gegend, AT
Florian Grasse · Hohenthurn, AT
Jochen Hilsenbeck · Villach, AT
Ravi Keshav Joshi · Klagenfurt, AT
Stefan Kramp · Villach, AT
Stefan Krivec · Villach, AT
Grzegorz Lupina · Villach, AT
Hiroshi Narahashi · Villach, AT
Andreas Voerckel · Finkenstein, AT
Stefan Woehlert · Villach, AT

Key dates

Filing date	Nov 30, 2021
Grant date	Dec 12, 2023
Priority date	—
Expiry date	Jan 8, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/106
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a contact metallization layer that includes aluminum and is arranged on a semiconductor substrate, an inorganic passivation structure arranged on the semiconductor substrate, an organic passivation layer comprising a first part that is arranged on the contact metallization layer, and a second part that is arranged on the inorganic passivation structure, a first layer structure including a first part that is in contact with the contact metallization layer, a second part that is contact with the inorganic passivation structure, and a third part that is disposed on the semiconductor substrate laterally between the inorganic passivation structure and the organic passivation layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.