Patent · US Active

Electronic device with multi-layer contact and system

US11842975B2 · kind B2 · utility

1Cited by

3References

8Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Alexander Heinrich · Bad Abbach, DE
Michael Juerss · Regenstauf, DE
Konrad Roesl · Teublitz, DE
Oliver Eichinger · Regensburg, DE
Kok Chai Goh · Melaka City, MY
Tobias Schmidt · Munich, DE

Key dates

Filing date	Nov 11, 2019
Grant date	Dec 12, 2023
Priority date	—
Expiry date	Nov 11, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/1776
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.