Semiconductor device and method for fabricating the same
US11849648B2 · kind B2 · utility
1Cited by
6References
6Claims
0Family size
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Key dates
| Filing date | Jun 8, 2021 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Aug 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.