Method of manufacturing semiconductor package
US11854893B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2022 |
| Grant date | Dec 26, 2023 |
| Priority date | — |
| Expiry date | Jun 27, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor package, includes forming a mask layer on a wafer, the wafer including a semiconductor substrate and an insulating layer; forming a groove in the semiconductor substrate by performing a first laser grooving process; expanding an opening of the mask layer opened by the first laser grooving process by performing a second laser grooving process; exposing a portion of the insulating layer by removing a portion of the mask layer; and cutting the semiconductor substrate while removing the portion of the insulating layer exposed during the exposing by performing a dicing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.