Techniques to improve adhesion and defects for tungsten carbide film
US11859275B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2019 |
| Grant date | Jan 2, 2024 |
| Priority date | — |
| Expiry date | May 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.