Temperature-based in-situ edge assymetry correction during CMP

US11865671B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Haosheng Wu · San Jose, US
• Shou-Sung Chang · Mountain View, US
• Jianshe Tang · San Jose, US
• Chih Chung Chou · San Jose, US
• Hui Chen · Burlingame, US
• Hari Soundararajan · Sunnyvale, US
• Benjamin Cherian · San Jose, US

Key dates

• Filing date: Apr 15, 2020
• Grant date: Jan 9, 2024
• Expiry date: Dec 5, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

A chemical mechanical polishing apparatus includes a platen to hold a polishing pad, a carrier laterally movable by an actuator across the polishing pad to hold a substrate against a polishing surface of the polishing pad during a polishing process, a thermal control system including a plurality of independently controllable heaters and coolers to independently control temperatures of a plurality of zones on the polishing pad, and a controller configured to cause the thermal control system to generate a first zone having a first temperature and a second zone having a different second temperature on the polishing pad.