Method for manufacturing a sensor device with a buried deep trench structure and sensor device

US11869919B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Magali Glemet · Dresden, DE
• Boris Binder · Dresden, DE
• Henning Feick · Dresden, DE
• Dirk Offenberg · Dresden, DE

Key dates

• Filing date: Nov 25, 2020
• Grant date: Jan 9, 2024
• Expiry date: Jul 18, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

A sensor device includes: a semiconductor substrate having a sensing region which extends vertically below a main surface region of the semiconductor substrate into the substrate; a semiconductor capping layer that extends vertically below the main surface region into the substrate; a buried deep trench structure that extends vertically below the capping layer into the substrate and laterally relative to the sensing region, the buried deep trench structure including a doped semiconductor layer that extends from a surface region of the buried deep trench structure into the substrate; a trench doping region that extends from the doped semiconductor layer of the buried deep trench structure into the substrate; and electronic circuitry for the sensing region in a capping region of the substrate vertically above the buried deep trench structure. Methods of manufacturing the sensor device are also provided.