Method for redistribution layer (RDL) repair by mitigating at least one defect with a custom RDL
US11887862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2022 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Sep 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/49816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure concerns methods of forming a semiconductor device with a repairable redistribution layer (RDL) design, comprising: preparing an original repairable RDL design; forming first conductive segments of the repairable RDL design; inspecting the first conductive segments of the repairable RDL design to detect manufacturing defects; detecting at least one defect in the first conductive segments; and forming second conductive segments of the repairable RDL design according to a new custom RDL design to mitigate the negative effects of the at least one defect among the first conductive segments. The disclosure also concerns semiconductor devices with a repairable RDL design.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.