Method of producing a silicon carbide device with a trench gate

US11888032B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Caspar Leendertz · Munich, DE
• Thomas Basler · Riemerling, DE
• Paul Ellinghaus · Unterhaching, DE
• Rudolf Elpelt · Erlangen, DE
• Michael Hell · Erlangen, DE
• Jens Peter Konrath · Villach, AT
• Shiqin Niu · Freising, DE
• Dethard Peters · Edenkoben, DE
• Konrad Schraml · Weiling, DE
• Bernd Zippelius · Erlangen, DE

Key dates

• Filing date: Dec 2, 2022
• Grant date: Jan 30, 2024
• Expiry date: Dec 2, 2042

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02B70/10

Abstract

A method of producing a silicon carbide (SiC) device includes: forming a stripe-shaped trench gate structure that extends from a first surface of a SiC body into the SiC body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; forming at least one source region of a first conductivity type; and forming a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. Forming the shielding region includes: forming a deep shielding portion; and forming a top shielding portion between the first surface and the deep shielding portion, the top shielding portion being in contact with the first bottom edge.