Gate oxide for nanosheet transistor devices
US11888048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2021 |
| Grant date | Jan 30, 2024 |
| Priority date | — |
| Expiry date | Nov 9, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/8311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor structure includes forming a first nanosheet stack and a second nanosheet stack on a semiconductor substrate. The first nanosheet stack includes a plurality of alternating first sacrificial layers and first channel layers. The first sacrificial layers each define a first sacrificial height. The second nanosheet stack includes a plurality of alternating second sacrificial layers and second channel layers. The second sacrificial layers each define a second sacrificial height greater than the first sacrificial height of the first sacrificial layers. The method further includes removing the first and second sacrificial layers respectively from the first and second nanosheet stacks. A metal gate is deposited over the first and second nanosheet stacks to form respective first and second nanosheet transistor structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.