Electronic device having an oxygen free platinum group metal film
US11894233B2 · kind B2 · utility
0Cited by
5References
9Claims
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Key dates
| Filing date | Sep 29, 2022 |
| Grant date | Feb 6, 2024 |
| Priority date | — |
| Expiry date | Sep 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53242
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.