III-N multichip modules and methods of fabrication
US11908687B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2021 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Dec 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/821
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.