Patent · US Active

Ion beam implantation method and semiconductor device

US11908694B2 · kind B2 · utility

0Cited by

3References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Moriz Jelinek · Villach, AT
Michael Hell · Erlangen, DE
Caspar Leendertz · Munich, DE
Kristijan Luka MLETSCHNIG · Villach, AT
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Dec 18, 2020
Grant date	Feb 20, 2024
Priority date	—
Expiry date	Jan 9, 2042

Classification

Technology area (CPC H)Electricity
CPC primaryH01J2237/31703
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.