Semiconductor devices, transistors, and related methods for contacting metal oxide semiconductor devices
US11908913B2 · kind B2 · utility
0Cited by
19References
20Claims
0Family size
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Key dates
| Filing date | Apr 28, 2022 |
| Grant date | Feb 20, 2024 |
| Priority date | — |
| Expiry date | Apr 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/63
Abstract
A semiconductor device is disclosed. The semiconductor device includes a transistor including a source contact, a drain contact, and a channel region including an oxide semiconductor material as the channel material. At least one of the drain contact or the source contact includes a conductive material, such as ruthenium, to reduce the Schottky effects at the interface with the channel material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.