Methods and apparatus for processing a substrate
US11913107B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2019 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Apr 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/741
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.