Cleaning of sin with CCP plasma or RPS clean
US11915918B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2021 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Jun 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32091
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A physical vapor deposition processing chamber is described. The processing chamber includes a target backing plate in a top portion of the processing chamber, a substrate support in a bottom portion of the processing chamber, a deposition ring positioned at an outer periphery of the substrate support and a shield. The substrate support has a support surface spaced a distance from the target backing plate to form a process cavity. The shield forms an outer bound of the process cavity. In-chamber cleaning methods are also described. In an embodiment, the method includes closing a bottom gas flow path of a processing chamber to a process cavity, flowing an inert gas from the bottom gas flow path, flowing a reactant into the process cavity through an opening in the shield, and evacuating the reaction gas from the process cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.