Extreme ultraviolet lithography patterning method
US11915931B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2021 |
| Grant date | Feb 27, 2024 |
| Priority date | — |
| Expiry date | Feb 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.