Oxyhalide precursors
US11919780B2 · kind B2 · utility
0Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2020 |
| Grant date | Mar 5, 2024 |
| Priority date | — |
| Expiry date | Feb 6, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2002/88
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The invention provides a process for preparing molybdenum and tungsten oxyhalide compounds which are useful in the deposition of molybdenum and tungsten containing films on various surfaces of microelectronic devices. In the process of the invention, a molybdenum or tungsten trioxide is heated in either a solid state medium or in a melt-phase reaction comprising a eutectic blend comprising alkaline and/or alkaline earth metal salts. The molybdenum or tungsten oxyhalides thus formed may be isolated as a vapor and crystallized to provide highly pure precursor compounds such as MoO2Cl2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.