Lateral recess measurement in a semiconductor specimen

US11921063B2 · kind B2 · utility

Assignee

• Applied Materials Israel Ltd. · IL

Inventors

• Michael Chemama · Rehovot, IL
• Ron Meiry · Upland, US
• Moshe Eliasof · Givatayim, IL
• Lior Yaron · Nes Ziona, IL
• Guy Eytan · Kidron, IL
• Konstantin Chirko · Rehovot, IL
• Rafael BISTRITZER · Netanya, IL

Key dates

• Filing date: Jul 21, 2021
• Grant date: Mar 5, 2024
• Expiry date: May 9, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01J2237/2815
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

There is provided a system and method of measuring a lateral recess in a semiconductor specimen, comprising: obtaining a first image acquired by collecting SEs emitted from the surface of the specimen, and a second image acquired by collecting BSEs scattered from an interior region of the specimen between the surface and a target second layer, the specimen scanned using an electron beam with a landing energy selected to penetrate to a depth corresponding to the target second layer; generating a first GL waveform based on the first image, and a second GL waveform based on the second image; estimating a first width of the first layers based on the first GL waveform, and a second width with respect to at least the target second layer based on the second GL; and measuring a lateral recess based on the first width and the second width.