High electron mobility transistor devices having a silicided polysilicon layer

US11923446B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Vibhor Jain · Williston, US
• Johnatan A. Kantarovsky · South Burlington, US
• Mark D. Levy · Williston, US
• Ephrem G. Gebreselasie · South Burlington, US
• Yves T. Ngu · Butlers Corners, US
• Siva P. Adusumilli · South Burlington, US

Key dates

• Filing date: Oct 17, 2021
• Grant date: Mar 5, 2024
• Expiry date: Oct 19, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to high electron mobility transistor (HEMT) devices having a silicided polysilicon layer. The present disclosure may provide an active region above a substrate, source and drain electrodes in contact with the active region, a gate above the active region, the gate being laterally between the source and drain electrodes, a polysilicon layer above the substrate, and a silicide layer on the polysilicon layer. The active region includes at least two material layers with different band gaps. The polysilicon layer may be configured as an electronic fuse, a resistor, or a diode.