Silyl pseudohalides for silicon containing films
US11932940B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Nov 12, 2020 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Mar 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silyl pseudohalides having a general formula of R4-nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.