Atomic layer etching for subtractive metal etch
US11935758B2 · kind B2 · utility
1Cited by
1References
7Claims
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Key dates
| Filing date | Apr 27, 2020 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Jul 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.