Lateral bipolar transistor with gated collector
US11935923B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2021 |
| Grant date | Mar 19, 2024 |
| Priority date | — |
| Expiry date | Jan 29, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a lateral bipolar transistor with gated collector and methods of manufacture. The structure includes: an extrinsic base region vertically over a semiconductor substrate and comprising asymmetrical sidewall spacers on opposing sidewalls of the extrinsic base region; a collector region on the semiconductor substrate and separated from the extrinsic base region by at least a first spacer of the asymmetrical sidewall spacers; and an emitter region on the semiconductor substrate and separated from the extrinsic base region by a second spacer of the asymmetrical sidewall spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.