Gas delivery for tungsten-containing layer
US11939668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2022 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Apr 26, 2042 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/458
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.