Methods for selective dry etching gallium oxide
US11942330B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2022 |
| Grant date | Mar 26, 2024 |
| Priority date | — |
| Expiry date | Jun 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02175
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary methods of etching gallium oxide from a semiconductor substrate may include flowing a first reagent in a substrate processing region housing the semiconductor substrate. The first reagent may include HX. X may be at least one of fluorine, chlorine, and bromine. The semiconductor substrate may include an exposed region of gallium oxide. Fluorinating the exposed region of gallium oxide may form a gallium halide and H2O. The methods may include flowing a second reagent in the substrate processing region. The second reagent may be at least one of trimethylgallium, tin acetylacetonate, tetramethylsilane, and trimethyltin chloride. The second reagent may promote a ligand exchange where a methyl group may be transferred to the gallium halide to form a volatile Me2GaY or Me3Ga. Y may be at least one of fluorine, chlorine, and bromine from the second reagent. The methods may include recessing a surface of the gallium oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.