Interconnect structure and forming method thereof
US11955441B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2022 |
| Grant date | Apr 9, 2024 |
| Priority date | — |
| Expiry date | Mar 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/33519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure comprises a first dielectric layer, a first metal layer, a second dielectric layer, a metal via, and a second metal layer. The first dielectric layer is over a substrate. The first metal layer is over the first dielectric layer. The first metal layer comprises a first portion and a second portion spaced apart from the first portion. The second dielectric layer is over the first metal layer. The metal via has an upper portion in the second dielectric layer, a middle portion between the first and second portions of the first metal layer, and a lower portion in the first dielectric layer. The second metal layer is over the metal via. From a top view the second metal layer comprises a metal line having longitudinal sides respectively set back from opposite sides of the first portion of the first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.