Method for nucleation of conductive nitride films
US11965239B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jan 28, 2021 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Apr 17, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32051
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is improved methodology for the nucleation of certain metal nitride substrate surfaces utilizing certain silicon-containing halides, silicon-containing amides, and certain metal precursors, in conjunction with nitrogen-containing reducing gases. While utilizing a pretreatment step, the methodology shows greatly improved nucleation wherein a microelectronic device substrate having such a metal nitride film deposited thereon has a thickness of about 10 Å to about 15 Å and less than about 1% of void area. Once such nucleation has been achieved, traditional layer-upon-layer deposition can rapidly take place.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.