Substrate processing system including dual ion filter for downstream plasma
US11967486B2 · kind B2 · utility
0Cited by
3References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2020 |
| Grant date | Apr 23, 2024 |
| Priority date | — |
| Expiry date | Dec 22, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A substrate processing system includes an upper chamber and a gas delivery system to supply a gas mixture to the upper chamber. An RF generator generates plasma in the upper chamber. A lower chamber includes a substrate support. A dual ion filter is arranged between the upper chamber and the lower chamber. The dual ion filter includes an upper filter including a first plurality of through holes configured to filter ions. A lower filter includes a second plurality of through holes configured to control plasma uniformity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.