Method for determining parameters in on-wafer calibration piece model

US11971451B2 · kind B2 · utility

Assignee

• THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION · CN

Inventors

• Aihua Wu · Xinzhai, CN
• Yibang Wang · Shijiazhuang, CN
• Faguo Liang · Shijiazhuang, CN
• Chen Liu · Weihai, CN
• Ye Huo · Shijiazhuang, CN
• Peng Luan · Shijiazhuang, CN
• Jing Sun · Suzhou, CN
• Yanli Li · Los Angeles, US

Key dates

• Filing date: Dec 14, 2021
• Grant date: Apr 30, 2024
• Expiry date: Nov 15, 2042

Classification

• Technology area (CPC G): Physics
• CPC primary: G01R35/005
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method includes: constructing an on-wafer calibration piece model set that includes one or more on-wafer calibration piece models, where each of the one or more on-wafer calibration piece models has a corresponding on-wafer calibration piece; selecting an on-wafer calibration piece model from the on-wafer calibration piece model set; measuring the on-wafer calibration piece utilizing an on-wafer S parameter measurement system that is calibrated using a multi-thread TRL calibration method in a Terahertz frequency band, to obtain an S parameter of the on-wafer calibration piece; and calculating a plurality of different parameters that represent crosstalk of calibration pieces in the on-wafer calibration piece model, according to an admittance calculated according to the S parameter and an admittance formula corresponding to the on-wafer calibration piece model.