Area selective carbon-based film deposition
US11972940B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2022 |
| Grant date | Apr 30, 2024 |
| Priority date | — |
| Expiry date | Apr 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.