Atomic layer deposition on 3D NAND structures
US11972952B2 · kind B2 · utility
1Cited by
156References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 13, 2019 |
| Grant date | Apr 30, 2024 |
| Priority date | — |
| Expiry date | Mar 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses are described that provide tungsten deposition with low roughness. In some embodiments, the methods involve co-flowing nitrogen with hydrogen during an atomic layer deposition process of depositing tungsten that uses hydrogen as a reducing agent. In some embodiments, the methods involve depositing a cap layer, such as tungsten oxide or amorphous tungsten layer, on a sidewall surface of a 3D NAND structure. The disclosed embodiments have a wide variety of applications including depositing tungsten into 3D NAND structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.