Aqueous and semi-aqueous cleaners for the removal of post-etch residues with tungsten and cobalt compatibility
US11978622B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Jun 24, 2015 |
| Grant date | May 7, 2024 |
| Priority date | — |
| Expiry date | Jun 24, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.